优势供应APDS-9921

Operating Characteristics, V DD = 3 V, T A = 25° C (unless otherwise noted)
Parameter Symbol Min Typ Max Units Test Conditions
Supply current  [1] I DD 195 250 ?A Active (ATIME=0xdb, 100ms)
90 Wait Mode
2.2 4.0 Sleep Mode
INT SDA output low voltage V OL 0 0.4 V 3 mA sink current
0 0.6 6 mA sink current
Leakage current, SDA, SCL, INT Pins I LEAK -5 5 ?A
SCL, SDA input high voltage V IH 1.25 VDD V
SCL, SDA input low voltage V IL 0.54 V
Note:
1. The power consumption is raised by the programmed amount of Proximity LED Drive during the 8 us the LED pulse is on. The nominal and
maximum values are shown under Proximity Characteristics. There the I DD supply current is I DD Active + Proximity LED Drive programmed value.
ALS Characteristics, V DD = 3 V, T A = 25° C, Gain = 16, AEN = 1 , AGL = 0 (unless otherwise noted)
Parameter Channel Min Typ Max Units Test Conditions
Dark ALS ADC count value  Ch0 0 1 5 counts Ee = 0, AGAIN = 120x,
ATIME = 0xDB(100ms)
Ch1 0 1 5
ALS ADC Integration Time
Step Size
2.58 2.73 2.90 ms ATIME = 0xff
ALS ADC Number of
Integration Steps
1 256 steps
Full Scale ADC Counts per Step 1023 counts
Full scale ADC count value 65535 counts ATIME = 0xC0
ALS ADC count value Ch0 4000 5000 6000 counts ?p = 640 nm, Ee = 56 ?W/cm2,
ATIME = 0xF6 (27 ms), GAIN = 16x
Ch1 950
Ch0 4000 5000 6000 ?p = 850 nm, Ee = 79 ?W/cm2,
ATIME = 0xF6 (27 ms), GAIN = 16x
Ch1 2900
ALS ADC count value ratio:
Ch1/Ch0
15.2 19.0 22.8 % ?p = 640 nm, ATIME = 0xF6 (27 ms)
43 58 73 ?p = 850 nm, ATIME = 0xF6 (27 ms)
Gain scaling, relative to
1x gain setting
0.128 0.16 0.192 AGAIN = 1× and AGL = 1
7.2 8.0 8.8 AGAIN = 8× and AGL = 0
14.4 16.0 17.6 AGAIN = 16× and AGL = 0
108 120 132 AGAIN = 120× and AGL = 0
Notes:
1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs and infrared
850 nm LEDs are used for fi nal product testing for compatibility with high-volume production.
2. The 640 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength = 640 nm and spectral
halfwidth ? = 17 nm.
3. The 850 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength = 850 nm and spectral
halfwidth ? = 40 nm.
4. The specifi ed light intensity is ** modulated by the pulse output of the device so that during the pulse output low time, the light intensity is at
the specifi ed level, and zero otherwise